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| polyfet rf devices SM341 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 300 Watts Junction to Case Thermal Resistance o 0.55 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Voltage 125 V Gate to Source Voltage 20 V 15.0 A RF CHARACTERISTICS ( 150.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 65 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.80 A, Vds = 50.0 V, F = Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz 175 MHz VSWR Relative Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 5.5 0.30 35.00 400.0 15.0 200.0 MIN 125 5.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 40.00 mA, Vgs = 0V Vds = 50.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 6.00 A Vgs = 20V, Vds = 10V Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/11/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SM341 POUT VS PIN GRAPH SM341 Freq=175 Mhz; Idq=.5A, Vds=50Vdc 1000 CAPACITANCE VS VOLTAGE S3E 1 DIE CAPACITANCE 14.0 13.5 13.0 240 Ciss 200 160 Linear @ 120W P1dB = 200W Pout 12.5 12.0 100 Coss 120 Gain 80 Efficiency = 55% 40 11.5 11.0 10.5 10.0 0 5 10 Pin in Watts 15 20 10 0 10 Crss 0 VDS IN VOLTS 20 30 40 50 IV CURVE S3E 1 DIE IV 35 30 25 ID IN AMPS 20 15 10 5 0 0 vg=2v 2 4 Vg=4v 6 8 10 12 14 VDS IN VOLTS Vg=6v vg=8v 16 0 18 20 vg=12v ID & GM VS VGS 100.00 S3E 1 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 10.00 1.00 gM 0.10 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/11/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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